Title :
Optimized double heterojunction pseudomorphic InP/InxGa 1-xAs/InP (0.64⩽x⩽0.82)p-MODFETs and the role of strain in their design
Author :
Küsters, Antonio Mesquida ; Kohl, Andreas ; Sommer, Volker ; Müller, Robert ; Heime, Klaus
Author_Institution :
Inst. fuer Halbeitertech., Aachen, Germany
fDate :
12/1/1993 12:00:00 AM
Abstract :
The design and DC and RF characteristics of double heterojunction pseudomorphic InxGa1-xAs/InP (0.64 ⩽x⩽0.82) p-type MODFETs are reported. After optimizing the layer sequence in a structure with 64%, In-mole fraction, in order to suppress the parallel conduction in the doping layers, three structures with increased strain (x=0.73, 0.77, and 0.82) were created taking into account the critical channel thickness according to the mechanical equilibrium model and the a priori predicted doping layer thickness. The latter was found to be strongly affected by the strain in the channel. A very good agreement between predicted and measured results was observed. The new structures showed very good performance, indicating high modulation efficiencies
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; DC characteristics; InP-InGaAs-InP; InP/InxGa1-xAs/InP; RF characteristics; critical channel thickness; doping layer thickness; doping layers; double heterojunction pseudomorphic p-MODFETs; layer sequence; mechanical equilibrium model; modulation efficiencies; parallel conduction; Capacitive sensors; Doping; Effective mass; HEMTs; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
