• DocumentCode
    985638
  • Title

    Optically triggered In0.53Ga0.47As-transferred-electron devices for repeater applications

  • Author

    Hahn, Dietmar ; Hansen, Karsten ; Malacky, Lubomir ; Schlachetzhi, A.

  • Author_Institution
    Inst. fuer Halbeitertech., Tech. Univ. Braunschweig, Germany
  • Volume
    40
  • Issue
    12
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    2199
  • Lastpage
    2203
  • Abstract
    The generation of current pulses in In0.53Ga0.47 As-transfer devices by short optical pulses is demonstrated. The triggering conditions for the generation of single domains are determined with respect to optical peak power, doping concentration, and location of irradiation. The sensitivity and gain of a proposed repeater circuit are calculated
  • Keywords
    Gunn devices; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; pulse generators; repeaters; In0.53Ga0.47As; In0.53Ga0.47As transferred electron devices; OEIC; current pulse generation; doping concentration; gain; irradiation location; optical peak power; optical triggering; repeater circuit; sensitivity; short optical pulses; single domain generation; triggering conditions; Circuits; Diode lasers; Electron optics; High speed optical techniques; Integrated optics; Optical devices; Optical pulse shaping; Optical pulses; Repeaters; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.249465
  • Filename
    249465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985638