• DocumentCode
    985648
  • Title

    Repair technique for phase-shifting masks using silicon-containing resist

  • Author

    Watanabe, Hiromi ; Sugiura, Emiko ; Imoriya, Tadashi ; Todokoro, Yoshihiro ; Inoue, Morio

  • Author_Institution
    Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan
  • Volume
    40
  • Issue
    12
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    2211
  • Lastpage
    2215
  • Abstract
    A repair technique for shifter defects on phase shifting masks is described. It is based on the spin-coating of silicon-containing resist on the entire mask, electron beam exposure, and development. The new repair technique is quite simple because it does not require the deposition or removal of shifter materials. Both intrusion and extrusion shifter defects have been successfully repaired
  • Keywords
    electron beam lithography; electron resists; masks; chemically amplified negative electron beam resist; development; electron beam exposure; extrusion shifter defects; intrusion shifter defects; phase-shifting masks; repair technique; shifter dot defects; shifter pinhole defects; silicon-containing resist; spin-coating; Electron beams; Image restoration; Interference; Ion beams; Lithography; Optical design; Resists; Shape; Sputtering; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.249466
  • Filename
    249466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985648