• DocumentCode
    985652
  • Title

    LPE growth of InP/InGaAs/InP DH wafers on (100) InP substrates

  • Author

    Takahashi, N.S. ; Sasaki, T. ; Fukushima, Akio ; Kurita, Satoshi

  • Author_Institution
    Keio University, Department of Electrical Engineering, Yokohama, Japan
  • Volume
    19
  • Issue
    11
  • fYear
    1983
  • Firstpage
    402
  • Lastpage
    403
  • Abstract
    An InP/InGaAs/InP double heterostructure wafer is grown directly on a (100) InP substrate using very low temperature LPE growth. This crystal exhibits a thin transition layer at a InP-InGaAs interface because of dissolution of the ternary layer.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; (100) InP substrates; III-V semiconductor; InP-InGaAs interface; InP/InGaAs/InP DH wafers; LPE growth; double heterostructure; low temperature; p-n heterojunctions; semiconductor epitaxial growth; ternary layer dissolution; thin transition layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830276
  • Filename
    4247735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985652