Title :
LPE growth of InP/InGaAs/InP DH wafers on (100) InP substrates
Author :
Takahashi, N.S. ; Sasaki, T. ; Fukushima, Akio ; Kurita, Satoshi
Author_Institution :
Keio University, Department of Electrical Engineering, Yokohama, Japan
Abstract :
An InP/InGaAs/InP double heterostructure wafer is grown directly on a (100) InP substrate using very low temperature LPE growth. This crystal exhibits a thin transition layer at a InP-InGaAs interface because of dissolution of the ternary layer.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; (100) InP substrates; III-V semiconductor; InP-InGaAs interface; InP/InGaAs/InP DH wafers; LPE growth; double heterostructure; low temperature; p-n heterojunctions; semiconductor epitaxial growth; ternary layer dissolution; thin transition layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830276
