• DocumentCode
    985683
  • Title

    Transferred Electron Amplifiers and Oscillators

  • Author

    Hilsum, C.

  • Author_Institution
    Services Electronics Research Laboratory, Baldock, Hertfordshire, England
  • Volume
    50
  • Issue
    2
  • fYear
    1962
  • Firstpage
    185
  • Lastpage
    189
  • Abstract
    In some semiconductors the conduction band system has two minima separated by only a small energy, and the lower minimum has associated with it a smaller electron effective mass than the upper minimum. At high electric fields it should be possible to transfer electrons to the upper minimum where they will have a lower mobility. The conductivity of a homogeneous crystal bar can therefore decrease as the field is increased, and it is conceivable that a differential negative resistance could be obtained. The conditions needed for obtaining negative resistance are examined, and calculations made for GaSb and semi-insulating GaAs. It appears that negative resistances should be observable in both these materials.
  • Keywords
    Conductivity; Crystalline materials; Effective mass; Electric resistance; Electron mobility; Gallium arsenide; Oscillators; P-n junctions; Semiconductor diodes; Solids;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1962.288025
  • Filename
    4066627