DocumentCode
985695
Title
Degradation mechanism in 1.3 ¿m InGaAsP/InP buried crescent laser diode at a high temperature
Author
Oomura, E. ; Higuchi, H. ; Hirano, R. ; Sakakibara, Y. ; Namizaki, H. ; Susaki, W.
Author_Institution
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Volume
19
Issue
11
fYear
1983
Firstpage
407
Lastpage
408
Abstract
A leakage current flowing through a junction between a p-InP current blocking layer and an n-InP cladding layer is examined in connection with a degradation of a buried crescent laser diode at a high temperature. The degradation characteristics have been successfully explained by a theoretical model proposed in this study.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor device models; semiconductor junction lasers; 1.3 microns; BH device; III-V semiconductors; InGaAsP/InP buried crescent laser diode; degradation; degradation characteristics; leakage current; n-InP cladding layer; p-InP current blocking layer; p-n heterojunctions; semiconductor lasers; theoretical model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830279
Filename
4247738
Link To Document