Title :
Degradation mechanism in 1.3 ¿m InGaAsP/InP buried crescent laser diode at a high temperature
Author :
Oomura, E. ; Higuchi, H. ; Hirano, R. ; Sakakibara, Y. ; Namizaki, H. ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Abstract :
A leakage current flowing through a junction between a p-InP current blocking layer and an n-InP cladding layer is examined in connection with a degradation of a buried crescent laser diode at a high temperature. The degradation characteristics have been successfully explained by a theoretical model proposed in this study.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor device models; semiconductor junction lasers; 1.3 microns; BH device; III-V semiconductors; InGaAsP/InP buried crescent laser diode; degradation; degradation characteristics; leakage current; n-InP cladding layer; p-InP current blocking layer; p-n heterojunctions; semiconductor lasers; theoretical model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830279
