DocumentCode
985703
Title
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultrathin SOI PMOS devices
Author
Kuo, James B. ; Tang, Mao-Chuan ; Sim, Jai-hoon
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
40
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
2237
Lastpage
2244
Abstract
An analytical threshold voltage model for SiGe-channel ultrathin SOI PMOS devices is presented. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical-formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at the top of the field oxide
Keywords
Ge-Si alloys; insulated gate field effect transistors; semiconductor device models; semiconductor materials; semiconductor-insulator boundaries; MOSFET; PISCES simulation; SiGe-Si; SiGe-channel; analytical model; back gate bias dependent; conduction channel; field oxide; threshold voltage model; ultrathin SOI PMOS devices; Analytical models; Germanium silicon alloys; MOS devices; Poisson equations; Predictive models; Semiconductor thin films; Silicon germanium; Substrates; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.249471
Filename
249471
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