Title :
An analytical back gate bias dependent threshold voltage model for SiGe-channel ultrathin SOI PMOS devices
Author :
Kuo, James B. ; Tang, Mao-Chuan ; Sim, Jai-hoon
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
12/1/1993 12:00:00 AM
Abstract :
An analytical threshold voltage model for SiGe-channel ultrathin SOI PMOS devices is presented. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical-formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at the top of the field oxide
Keywords :
Ge-Si alloys; insulated gate field effect transistors; semiconductor device models; semiconductor materials; semiconductor-insulator boundaries; MOSFET; PISCES simulation; SiGe-Si; SiGe-channel; analytical model; back gate bias dependent; conduction channel; field oxide; threshold voltage model; ultrathin SOI PMOS devices; Analytical models; Germanium silicon alloys; MOS devices; Poisson equations; Predictive models; Semiconductor thin films; Silicon germanium; Substrates; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
