A cellular-band CDMA 0.25-/spl mu/m CMOS LNA linearized using active post-distortion

Author

Kim, Namsoo ; Aparin, Vladimir ; Barnett, Kenneth ; Persico, Charles

Author_Institution

Qualcomm, San Diego, CA

Volume

41

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1530

Lastpage

1534

Abstract

The theory of a linearization method using active post-distortion (APD) is explained for low-frequency and high-frequency applications. The low-frequency cancellation is explained in power series format and the high-frequency cancellation is explained in Volterra series format. The method is utilized for a cellular band (869-894 MHz) CDMA low-noise amplifier (LNA), which is implemented in 0.25-mum CMOS process. The LNA achieves 1.2 dB NF, 16.2 dB power gain, and +8 dBm IIP3 while consuming 12 mA current from 2.6 V supply voltage. It shows 13.5 dB of IM3 product reduction with 0.15 dB NF penalty in comparison with an LNA which does not use the APD method

Keywords

CMOS integrated circuits; Volterra series; cellular radio; code division multiple access; intermodulation distortion; linearisation techniques; low noise amplifiers; 0.15 dB; 0.25 micron; 1.2 dB; 12 mA; 16.2 dB; 2.6 V; 869 to 894 MHz; CDMA low-noise amplifier; CMOS process; IM3 cancellation; Volterra series format; active post-distortion; cellular band CDMA; high-frequency cancellation; linearization method; low-frequency cancellation; power series format; CMOS technology; FETs; Linearity; Low-noise amplifiers; Multiaccess communication; Noise measurement; Signal to noise ratio; Transconductance; Voltage; Voltage-controlled oscillators; IM3 cancellation; RF CMOS; linearity; low-noise amplifier (LNA);

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.873909

Filename

1644862