• DocumentCode
    985816
  • Title

    New approach to the manufacture of low-threshold 1.5 ¿m distributed feedback lasers

  • Author

    Westbrook, L.D. ; Nelson, A.W. ; Dix, C.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    19
  • Issue
    11
  • fYear
    1983
  • Firstpage
    423
  • Lastpage
    424
  • Abstract
    Low-threshold-current (85 mA), oxide isolated InGaAsP/InP distributed feedback (DFB) lasers operating at a wavelength of ¿ = 1.5 ¿m have been produced for the first time using electron-beam-written DFB corrugations overgrown by MOCVD. The control and flexibility afforded by these techniques considerably ease the complexity of DFB laser manufacture.
  • Keywords
    III-V semiconductors; chemical vapour deposition; distributed feedback lasers; electron beam lithography; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; 1.5 micron wavelength; DFB laser manufacture; III-V semiconductors; InGaAsP/InP; MOCVD; corrugations; distributed feedback lasers; electron beam lithography; heterojunction device; oxide isolated; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830290
  • Filename
    4247756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985816