Title :
WCDMA multicarrier receiver for base-station applications
Author :
Ryynänen, Jussi ; Hotti, Mikko ; Saari, Ville ; Jussila, Jarkko ; Malinen, Arto ; Sumanen, Lauri ; Tikka, Tero ; Halonen, Kari A I
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo
fDate :
7/1/2006 12:00:00 AM
Abstract :
The multicarrier receiver IC described in this paper receives four adjacent WCDMA channels simultaneously in order to reduce the component count of a base-station. The receiver uses low-IF architecture and it is fabricated with a 0.25-mum SiGe BiCMOS process to meet the high-performance requirements set by the base-station application. The receiver includes a dual-input low-noise amplifier (LNA), quadrature mixers, a local-oscillator (LO) divider, IIP2 calibration circuits, 10-MHz low-pass filters, and ADC buffers. The receiver noise figures, measured over the downconverted WCDMA channels centered at 2.5-MHz and 7.5-MHz intermediate frequencies, are 3.0 dB and 2.6 dB, respectively. The receiver achieves 47-dB voltage gain and -12-dBm out-of-band IIP3 and consumes 535mW from a 2.5-V supply
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; code division multiple access; radio receivers; radiofrequency integrated circuits; wireless channels; 0.25 micron; 10 MHz; 2.5 MHz; 2.5 V; 2.6 dB; 3.0 dB; 47 dB; 535 mW; 7.5 MHz; ADC buffers; BiCMOS process; IIP2 calibration circuits; SiGe; WCDMA channels; analog integrated circuits; base stations; local-oscillator divider; low-noise amplifier; low-pass filters; multicarrier receiver IC; quadrature mixers; BiCMOS integrated circuits; Calibration; Frequency measurement; Germanium silicon alloys; Low pass filters; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; Silicon germanium; Analog integrated circuits; BiCMOS; base-station; radio frequency; receiver;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.873924
