DocumentCode
985851
Title
Modes of operation in dual-gate MESFET mixers
Author
Ashoka, H. ; Tucker, R.S.
Author_Institution
University of Queensland, Department of Electrical Engineering, Brisbane, Australia
Volume
19
Issue
11
fYear
1983
Firstpage
428
Lastpage
429
Abstract
The mechanisms of mixing in a dual-gate GaAs MESFET mixer are described. Based on a cascode DC model of the device, several modes of mixer operation are identified. It is shown that each single-gate MESFET in the cascode model can operate as a mixer or amplifier, depending on the DC bias conditions and mixer configuration.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; mixers (circuits); semiconductor device models; DC bias conditions; GaAS; III-V semiconductors; amplifier; cascode DC model; dual-gate MESFET mixers; operational modes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830293
Filename
4247760
Link To Document