DocumentCode
985865
Title
High-power InP MISFETs
Author
Armand, M. ; Bui, D.V. ; Chevrier, J. ; Linh, N.T.
Author_Institution
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Volume
19
Issue
12
fYear
1983
Firstpage
433
Lastpage
434
Abstract
InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33% power added efficiency. This power is more than twice that of the best GaAs MESFET.
Keywords
III-V semiconductors; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 9 GHz; III-V semiconductors; InP MISFETs; SiO2; deep channel recess; gate insulator; microwave devices; power transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830296
Filename
4247766
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