Title :
MIM gate FET: new GaAs enhancement-mode transistor
Author :
Kohn, Erhard ; Dortu, J.M.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
A new type of GaAs FET, the metal-insulator-metal gate FET, is proposed, which combines the advantages of both the GaAs MESFET and the GaAs MISFET. The device is especially suitable for the enhancement mode of operation.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; +1.5 V gate bias; GaAs; III-V semiconductor; MIM gate FET; Schottky gate; enhancement mode transistor; gate leakage; metal-insulator-metal gate; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830297
