DocumentCode
985881
Title
Characteristics of In0.52Al0.48As/In0.53 Ga0.47As/InP HEMT´s with n-and p-channel doping
Author
Tian, Hua ; Kim, Kwan Weon ; Littlejohn, M.A. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
40
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
2362
Lastpage
2365
Abstract
The effects of modified n- and p-channel doping on the characteristics of 0.25-μm In0.52Al0.48As/In 0.53Ga0.47As/InP HEMTs are studied. The introduction of n- or p-channel doping (in addition to the modulation doping in the donor supply layer) is intended to modify the potential well and carrier distribution in the device channel for improved device performance. Self-consistent Monte Carlo simulations and experimental results both show considerably reduced output conductance and increased transconductance for the HEMT using modified p-channel doping compared with those for the HEMT with a modified n-channel. The performance enhancement for the HEMT with modified p-channel doping is attributed to improved carrier confinement in the potential well of the channel and reduced spread in the channel electric field profile
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; 0.25 micron; HEMT; In0.52Al0.48As-In0.53Ga0.47 As-InP; In0.52Al0.48As/In0.53Ga0.47 As/InP; InAlAs-InGaAs-InP; Monte Carlo simulations; carrier confinement; carrier distribution; channel electric field profile; device channel; modulation doping; n-channel doping; output conductance; p-channel doping; performance enhancement; potential well; transconductance; Doping; Gold; HEMTs; Indium phosphide; Leakage current; MESFETs; MODFETs; Schottky barriers; Schottky diodes; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.249489
Filename
249489
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