DocumentCode :
985905
Title :
Comments on "Determination of space-dependent electron distribution function by combined use of energy and Boltzmann transport equations: improvement, evaluation, and explanation
Author :
Fiegna, Claudio ; Sangiorgi, Enrico
Author_Institution :
Bologna Univ., Italy
Volume :
40
Issue :
12
fYear :
1993
Firstpage :
2369
Lastpage :
2370
Abstract :
For original paper, see S.L. Wang et al., ibid., vol.39., no.8, pp. 1821-1828 (Aug. 1992). In the work of Wang et al., an efficient method for obtaining the space-dependent energy electron distribution (EED) was reviewed and some limitations related to its applicability were extensively discussed by comparisons with one dimensional Monte Carlo simulations. Here, the reasons for some of these limits are clarified, and a fundamental limitation which was not considered is presented.<>
Keywords :
Boltzmann equation; Monte Carlo methods; carrier density; insulated gate field effect transistors; semiconductor device models; 2D Monte Carlo Poisson simulation; Boltzmann transport equation; MOSFET; applicability limits; electron average energy; electron concentration spatial derivative; homogeneous field approximation; one dimensional Monte Carlo simulations; space-dependent electron distribution function; Boltzmann equation; Computer interfaces; Cooling; Distribution functions; Electrons; Extrapolation; FETs; MOSFET circuits; Marine vehicles; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.249491
Filename :
249491
Link To Document :
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