Deposition of Co-Cr films by magnetron sputtering with highly efficient target utilization

A new type of magnetron sputtering method which can highly improve the utilization efficiency of a Co-Cr alloy target and suppress the bombardment of high-energy particles to substrate has been developed by forming the uniform magnetic flux confined in front of the target plane. The target utilization efficiencies in area and volume were as high as about 90% and 65%, respectively. The maximum deposition rate was about 0.26 μ/min. All Co-Cr films deposited by using this method were composed of HCP phase crystallites with c-axis orientation Δθ₅₀ ranging from 8 to 14°. The easy direction of magnetization was perpendicular to the film plane. The saturization magnetization M_s and the perpendicular coercivity H_c⊥ are in the ranges of 400-550 emu/cm³ and more than 1000 Oe, respectively. Accordingly, a plasma confining type of sputtering method may be useful for depositing Co-Cr films at a high rate and high target utilization efficiency without damage by plasma