Title :
Incorporation of Sb in GaAs1¿xSbx (x<0.15) by molecular beam epitaxy
Author :
Klem, J. ; Fischer, Ray ; Drummond, T.J. ; Morkoc, H. ; Cho, Andrew Y.
Author_Institution :
University of Illinois, Department of Electrical Engineering and Coordinated Science Laboratory, Urbana, USA
Abstract :
The composition of MBE-grown GaAs1¿xSbx (x<0.15) is investigated as a function of growth temperature for constant As and Sb flux and as a function of Sb effusion cell temperature for a fixed growth temperature. Under conditions of constant As and Sb flux, x remains fairly constant for growth temperatures of 480¿540°C, but decreases rapidly with increasing temperature in the range 540¿640°C. As a function of Sb effusion cell temperature, the Sb mole fraction is shown to increase slightly slower than the Sb vapour pressure.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 480 to 540degrees C; 540 to 640degrees C; GaAs1-xSbx; III-V semiconductor; MBE; Sb; composition; constant flux; effusion cell temperature; growth temperature; mole fraction; molecular beam epitaxy; vapour pressure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830310
