• DocumentCode
    986002
  • Title

    Lasing characteristics of improved GaInAsP/InP surface emitting injection lasers

  • Author

    Iga, Kenichi ; Soda, H. ; Terakado, T. ; Shimizu, Shogo

  • Author_Institution
    Tokyo Institute of Technology, Yokohama, Japan
  • Volume
    19
  • Issue
    13
  • fYear
    1983
  • Firstpage
    457
  • Lastpage
    458
  • Abstract
    The letter presents a surface-emitting GaInAsP/InP injection laser with 7 ¿m cavity length operating at 1.30 ¿m of wavelength. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64 Å/degree). The near-field diameter was 9 ¿m and the far-field angle (FWHM) was 9°. The polarisation was linear.
  • Keywords
    III-V semiconductors; gallium arsenide; p-n heterojunctions; semiconductor junction lasers; 1.3 micron operation; GaInAsP/InP; III-V semiconductors; far field radiation angle; lasing characteristics; linear polarisation; near field pattern; p-n heterojunctions; semiconductor lasers; single longitudinal mode; surface emitting injection lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830311
  • Filename
    4247786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986002