• DocumentCode
    986054
  • Title

    Localisation of defects on SOI films via selective recrystallisation using halogen lamps

  • Author

    Bensahel, D. ; Haond, M. ; Vu, D.P. ; Colinge, J.P.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, Meylan, France
  • Volume
    19
  • Issue
    13
  • fYear
    1983
  • Firstpage
    464
  • Lastpage
    466
  • Abstract
    Selective annealing by means of an incoherent light system has been employed to grow single-crystal Si on oxide. This technique allows control of the location of the remaining defects (subgrain boundaries) in the <100> recrystallised film.
  • Keywords
    elemental semiconductors; grain boundaries; recrystallisation annealing; semiconductor growth; semiconductor-insulator boundaries; silicon; (100) recrystallised film; SOI films; SiO2; defect localisation; elemental semiconductors; halogen lamps; incoherent light system; selective annealing; selective recrystallisation; semiconductor growth; single-crystal Si on oxide; subgrain boundaries;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830316
  • Filename
    4247793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986054