DocumentCode
986170
Title
Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 ¿m
Author
Razeghi, M. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Volume
19
Issue
13
fYear
1983
Firstpage
481
Lastpage
483
Abstract
We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1.5 ¿m, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.
Keywords
III-V semiconductors; ageing; chemical vapour deposition; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; 1.5 micron; DH laser diode; GaInAsP/InP; III-V semiconductor; MOCVD; ageing tests; double-heterostructure laser; semiconductor lasers; shallow proton stripe;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830327
Filename
4247808
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