• DocumentCode
    986205
  • Title

    Growth of garnet thin films for magneto-optic memories by pyrosol CVD process

  • Author

    Deschanvres, J.L. ; Langlet, M. ; Labeau, M. ; Joubert, J.C.

  • Author_Institution
    Ecole Nat. Superieure de Phys. de Grenoble, Domaine Univ., Saint Martin d´´Heres, France
  • Volume
    26
  • Issue
    1
  • fYear
    1990
  • fDate
    1/1/1990 12:00:00 AM
  • Firstpage
    187
  • Lastpage
    189
  • Abstract
    A description is given of the deposition of garnet thin films for magnetooptic memories. The deposition technique (pyrosol process) is based on the pyrolysis of an ultrasonic generated aerosol, which contains the dissolved organometallic precursors. Films have been deposited at temperatures ranging from 520° to 600 °C. Y3 Fe5O12 polycrystalline thin films with good crystallinity were obtained on glass or fused quartz substrates after annealing the deposited films. Single-crystal thin films were grown by epitaxy on GGG single-crystal wafers as shown by grazing X-ray diffraction and Kikuchi experiments. Magnetic and magnetooptic properties of the films were very close to the bulk material properties
  • Keywords
    Faraday effect; chemical vapour deposition; garnets; magnetic epitaxial layers; magnetic thin films; magnetisation; magneto-optical recording; pyrolysis; vapour phase epitaxial growth; yttrium compounds; 520 to 600 degC; Faraday rotation; GdGG; GdGa5O12; Kikuchi experiments; YFe5O12; YIG; crystallinity; deposition temperature; epitaxy; fused quartz substrates; garnet thin films; glass substructure; grazing X-ray diffraction; magnetic properties; magnetisation curve; magnetooptic memories; magnetooptic properties; organometallic precursors; polycrystalline thin films; pyrolysis; pyrosol CVD process; ultrasonic generated aerosol; Aerosols; Annealing; Crystallization; Garnet films; Glass; Iron; Magnetic films; Sputtering; Substrates; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.50530
  • Filename
    50530