Title :
Hybrid LPE/MBE-grown InGaAsP/InP DFB lasers
Author :
Asahi, H. ; Kawamura, Yuriko ; Noguchi, Y. ; Matsuoka, T. ; Nagai, Hiroto
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
InGaAsP/InP distributed-feedback (DFB) lasers operating at 1.5 ¿m have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE). A threshold current of 180 mA at 23°C and single-longitudinal-mode operation have been obtained.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.5 micron wavelength; InGaAsP/InP DFB lasers; LPE/MBE; distributed-feedback lasers; hybrid growth technique; liquid phase epitaxy; molecular beam epitaxy; semiconductor laser; single-longitudinal-mode operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830345
