• DocumentCode
    986386
  • Title

    Implications of velocity overshoot in heterojunction transit-time diodes

  • Author

    Blakey, P.A. ; East, J.R. ; Elta, M.E. ; Haddad, G.I.

  • Author_Institution
    University of Michigan, Electron Physics Laboratory, Department of Electrical & Computer Engineering, Ann Arbor, USA
  • Volume
    19
  • Issue
    14
  • fYear
    1983
  • Firstpage
    510
  • Lastpage
    512
  • Abstract
    The influence of transient transport in heterojunction transittime is discussed. It is argued that overshoot effects can be important in such devices, in which case the presence of the overshoot will significantly impact device design. Appropriately designed structures are predicted to be superior to their homojunction counterparts, particularly at millimetre wavelengths.
  • Keywords
    semiconductor diodes; transit time devices; MM wave devices; heterojunction transit-time diodes; transient transport; velocity overshoot;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830347
  • Filename
    4247837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986386