Title :
Implications of velocity overshoot in heterojunction transit-time diodes
Author :
Blakey, P.A. ; East, J.R. ; Elta, M.E. ; Haddad, G.I.
Author_Institution :
University of Michigan, Electron Physics Laboratory, Department of Electrical & Computer Engineering, Ann Arbor, USA
Abstract :
The influence of transient transport in heterojunction transittime is discussed. It is argued that overshoot effects can be important in such devices, in which case the presence of the overshoot will significantly impact device design. Appropriately designed structures are predicted to be superior to their homojunction counterparts, particularly at millimetre wavelengths.
Keywords :
semiconductor diodes; transit time devices; MM wave devices; heterojunction transit-time diodes; transient transport; velocity overshoot;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830347
