Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Author

Thomas, Shawn G. ; Johnson, Eric S. ; Tracy, Clarence ; Maniar, Papu ; Li, Xiuling ; Roof, Bradley ; Hartmann, Quesnell ; Ahmari, David A.

Author_Institution

Embedded Syst. & Phys. Sci. Lab., Motorola Inc., Tempe, AZ, USA

Volume

26

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

438

Lastpage

440

Abstract

In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; GOI substrates; III-V epitaxial material; InGaP-GaAs; bulk germanium substrates; dc characterization; epitaxial layers; germanium-on-insulator; heterojunction bipolar transistor; semi-insulating substrates; Buffer layers; Fabrication; Gallium arsenide; Germanium; Heterojunction bipolar transistors; III-V semiconductor materials; Laboratories; MOSFETs; Silicon on insulator technology; Substrates; GaAs; InGaP; germanium; germanium-on-insulator (GOI); heterojunction bipolar transistor (HBT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.851132

Filename

1458949