• DocumentCode
    986475
  • Title

    Planar structure AlGaAs/GaAs pin photodiode grown by MOCVD

  • Author

    Ito, Minora ; Wada, O. ; Miura, Shun ; Nakai, K. ; Sakurai, Takayasu

  • Author_Institution
    Fujitsu Ltd, Opto-semiconductor Devices Laboratories, Atsugi, Japan
  • Volume
    19
  • Issue
    14
  • fYear
    1983
  • Firstpage
    522
  • Lastpage
    523
  • Abstract
    A planar structure AlGaAs/GaAs PIN photodiode was fabricated by first using MOCVD. The p+-region was formed by Zn-diffusion in a high-resistivity AlGaAs window layer. The internal quantum efficiency, close to unity, and the cut-off frequency, as high as 1.2 GHz, have been demonstrated by 280 ¿m diameter devices.
  • Keywords
    CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; photodiodes; AlGaAs/GaAs p-i-n photodiode; MOCVD; Zn-diffusion; cut-off frequency; high-resistivity AlGaAs window layer; internal quantum efficiency; metalorganic chemical vapour deposition; planar structure; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830355
  • Filename
    4247847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986475