Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

Author

Tsai, C.M. ; Sheu, J.K. ; Lai, W.C. ; Hsu, Y.P. ; Wang, P.T. ; Kuo, C.T. ; Kuo, C.W. ; Chang, S.J. ; Su, Y.K.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

26

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

464

Lastpage

466

Abstract

GaN-based light-emitting diodes (LEDs) with naturally textured surfaces grown by MOCVD were demonstrated. In this study, a growth-interruption step and a surface treatment using biscyclopentadienyl magnesium (CP₂Mg) were simultaneously performed to form a plurality of nuclei sites on the surface of a p-type cladding layer, and then a p-type contact layer was grown on the p-type cladding layer, so as to create a p-type contact layer with a rough surface having truncated pyramids. Experimental results indicated that GaN-based LED with the truncated pyramids on the surface exhibited an enhancement in output power of 66% at 20 mA. It is worth noting that the typical 20-mA-driven forward voltage is only slightly higher than those of conventional LEDs (without the Mg-treatment process).

Keywords

III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; magnesium; rough surfaces; surface treatment; wide band gap semiconductors; 20 mA; GaN-based LED; InGaN; MOCVD; biscyclopentadienyl magnesium; enhanced output power; growth-interruption; light emitting diodes; naturally textured surface; nuclei sites; p-type cladding layer; p-type contact layer; rough surface; surface treatment; truncated pyramids; Etching; Gallium nitride; Light emitting diodes; MOCVD; Power generation; Refractive index; Rough surfaces; Surface roughness; Surface texture; Surface treatment; InGaN LED; Mg-treatment; textured surfaces; truncated pyramids;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.851243

Filename

1458957