4 kV 4H-SiC epitaxial emitter bipolar junction transistors

Author

Balachandran, Santhosh ; Chow, T.P. ; Agarwal, A. ; Scozzie, C. ; Jones, K.A.

Author_Institution

Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

26

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

470

Lastpage

472

Abstract

In this paper, we present 4H-SiC bipolar junction transistors (BJTs) with open-base blocking voltage (BV_CEO) of 4000 V, specific on-resistance (R_on,sp) of 56 mΩ-cm², and common-emitter current gain β∼9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics.

Keywords

heterojunction bipolar transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; 4 kV; SiC; common-emitter current gain; emitter contact resistance; emitter fingers; epitaxial emitter bipolar junction transistors; forward conduction characteristics; interdigitated base; multiple emitter stripes; open-base blocking voltage; power semiconductor devices; specific on-resistance; Annealing; Contact resistance; Current density; Fingers; MOSFETs; Silicon carbide; Substrates; Temperature; Thermal conductivity; Voltage; 4H-SiC; bipolar junction transistor (BJT); emitter contact resistance; power semiconductor devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.851174

Filename

1458959