DocumentCode :
986566
Title :
Enhancement of charge storage performance in double-gate silicon nanocrystal memories with ultrathin body structure
Author :
Yanagidaira, Kosuke ; Saitoh, Masumi ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Japan
Volume :
26
Issue :
7
fYear :
2005
fDate :
7/1/2005 12:00:00 AM
Firstpage :
473
Lastpage :
475
Abstract :
We propose double-gate silicon nanocrystal memories (NCMs) with ultrathin body structure. Double-gate NCMs experimentally show larger threshold voltage shift (ΔVth) and longer charge retention time than single-gate NCMs. These superior behaviors in double-gate NCMs are explained by the increase in the body potential due to electrons in one side nanocrystals that prevent electrons in the other side nanocrystals from escaping. Thinner transistor body enhances the mutual influence between electrons in both sides. It is also found that the endurance characteristics are also improved by the reduced potential difference in the tunnel oxide.
Keywords :
elemental semiconductors; nanostructured materials; semiconductor storage; silicon-on-insulator; Si; body potential; charge retention time; charge storage performance; double-gate silicon nanocrystal memories; endurance characteristics; potential difference; silicon on insulator; threshold voltage shift; tunnel oxide; ultrathin body structure; Aerosols; Electronic mail; Electrons; Nanocrystals; Nonvolatile memory; Proposals; Silicon on insulator technology; Stress; Subthreshold current; Threshold voltage; Double gate; silicon nanocrystal memory; silicon on insulator; ultrathin body;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.851126
Filename :
1458960
Link To Document :
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