Title :
Enhancement of charge storage performance in double-gate silicon nanocrystal memories with ultrathin body structure
Author :
Yanagidaira, Kosuke ; Saitoh, Masumi ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Japan
fDate :
7/1/2005 12:00:00 AM
Abstract :
We propose double-gate silicon nanocrystal memories (NCMs) with ultrathin body structure. Double-gate NCMs experimentally show larger threshold voltage shift (ΔVth) and longer charge retention time than single-gate NCMs. These superior behaviors in double-gate NCMs are explained by the increase in the body potential due to electrons in one side nanocrystals that prevent electrons in the other side nanocrystals from escaping. Thinner transistor body enhances the mutual influence between electrons in both sides. It is also found that the endurance characteristics are also improved by the reduced potential difference in the tunnel oxide.
Keywords :
elemental semiconductors; nanostructured materials; semiconductor storage; silicon-on-insulator; Si; body potential; charge retention time; charge storage performance; double-gate silicon nanocrystal memories; endurance characteristics; potential difference; silicon on insulator; threshold voltage shift; tunnel oxide; ultrathin body structure; Aerosols; Electronic mail; Electrons; Nanocrystals; Nonvolatile memory; Proposals; Silicon on insulator technology; Stress; Subthreshold current; Threshold voltage; Double gate; silicon nanocrystal memory; silicon on insulator; ultrathin body;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.851126