Title :
Electric-field-shielding layers formed by oxygen implantation into silicon
Author :
Nakashima, S. ; Akiya, M. ; Kato, Kazuhiko
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
The electric-field-shielding effect was found in a layer consisting of a mixture of polycrystalline silicon and silicon oxide formed by oxygen ion implanatation. The layer was formed between the buried SiO2 and the upper Si layer, which improved characteristics for MOSFETs fabricated using SIMOX (separation by implanted oxygen) technology. By forming this layer, the threshold voltages for the MOSFETs were almost independent of substrate bias. Drain-to-source breakdown voltages for the p-MOSFETs and n-MOSFETs were raised to 250 V and 180 V, respectively.
Keywords :
elemental semiconductors; insulated gate field effect transistors; ion implantation; semiconductor technology; silicon; MOSFETs; O ion implantation; SIMOX; SiO; buried SiO2; drain-to-source breakdown voltages; electric-field-shielding effect; polycrystalline Si; substrate bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830387
