Title :
A 5-Gb/s OEIC with voltage-up-converter
Author :
Swoboda, Robert ; Knorr, Johannes ; Zimmermann, Horst
Author_Institution :
Inst. for Electr. Meas. & Circuit Design, Tech. Univ. of Vienna, Austria
fDate :
7/1/2005 12:00:00 AM
Abstract :
In this paper (based on our previous paper at ESSCIRC 2004, "A 2.4 GHz-Bandwidth OEIC with Voltage-Up-Converter," but new results for 4 Gb/s and 5 Gb/s have been added), an optoelectronic integrated circuit (OEIC) with an integrated voltage-up-converter (VUC) to enhance the frequency response of an integrated pin photodiode is presented. With the VUC a voltage of 11 V is generated on the chip without any additional external components. Thus, for a single-supply environment of 5 V the bandwidth of the OEIC is increased from 1.5 to 2.4 GHz. For data rates of 1, 3, 4, and 5 Gb/s at a bit error rate of 10-9, sensitivities of -29.3, -24.3, -22.9, and -20.5 dBm, respectively, were measured at a wavelength of 660 nm. For the implementation of the OEIC a modified 0.6-μm silicon BiCMOS technology with fT=25 GHz is used.
Keywords :
BiCMOS integrated circuits; convertors; integrated optoelectronics; p-i-n photodiodes; silicon; 0.6 micron; 1 Gbit/s; 1.5 to 2.4 GHz; 11 V; 25 GHz; 3 Gbit/s; 4 Gbit/s; 5 Gbit/s; 5 V; 660 nm; BiCMOS technology; OEIC; Si; frequency response; integrated pin photodiode; optical interconnections; optical receivers; optoelectronic integrated circuit; p-i-n photodiodes; voltage-up-converter; Bandwidth; Circuit synthesis; Electric variables measurement; Optical interconnections; Optical receivers; Optoelectronic devices; Photodiodes; Silicon; Space technology; Voltage; Integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes p-i-n has been PIN throughout the rest of the issue and in the editorial; silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.847227
