Title :
Isolation spectra for laser diode optical switch
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Isolation spectra for a GaAlAs laser diode optical switch were measured directly by using a tunable light source. Isolation was higher than 60 dB in the 200 Ã… wavelength region. Theoretical isolation spectra, calculated by the GHLB-SME model, were coincident with the measured isolation spectra.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; semiconductor junction lasers; GHLB-SME model; GaAlAs laser diode optical switch; isolation spectra; tunable light source;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830399
