Title :
Attenuation measurements on MOCVD-grown GaAs/GaAlAs optical waveguides
Author :
Walker, R.G. ; Goodfellow, R.C.
Author_Institution :
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
We report loss measurements on MOCVD-grown GaAs/GaAlAs optical waveguides, by sequential cleaving with allowance for Fabry-Perot resonator effects. Upper bound values are 1.4 dB/cm for strip-loaded and 2.5 dB/cm for fully etched ridge waveguides.
Keywords :
III-V semiconductors; aluminium compounds; attenuation measurement; chemical vapour deposition; gallium arsenide; integrated optics; optical waveguides; semiconductor growth; Fabry-Perot resonator effects; GaAs/GaAlAs optical waveguides; MOCVD-grown; optical attenuation measurement; ride waveguides; sequential cleaving;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830403
