DocumentCode
987006
Title
Deposition of Nb3 Ge films on continuous stainless steel tapes by hollow cathode magnetron sputtering
Author
Hoshi, Y. ; Terada, N. ; Naoe, M. ; Yamanaka, S.
Author_Institution
Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan.
Volume
17
Issue
6
fYear
1981
fDate
11/1/1981 12:00:00 AM
Firstpage
3432
Lastpage
3434
Abstract
A hollow cathode type of magnetron sputtering apparatus useful for coating a long wire with thin films at high deposition rate above 5000 Å/min and low applied sputtering voltage leads to a reduced energy of the sputtered atoms condensing on the substrate. Therefore, this sputtering apparatus seemed to be useful for depositing the high Tc films with a metastable A15 phase. Then, the deposition of Nb3 Ge films on a continuous stainless steel tape has been attempted by using this sputtering apparatus. The target is a cylinder which is composed of a Nb tube with Nb end plates and Ge chips. The authors have succeeded in depositing the single A15 phase Nb3 Ge films uniform in composition all over the tape substrate under the condition of applied voltage below 300 V and argon pressure above 10 mTorr. The deposited films exhibit relatively high Tc about 17 K.
Keywords
Conducting films; Sputtering; Superconducting materials; Argon; Atomic layer deposition; Cathodes; Coatings; Low voltage; Metastasis; Niobium; Sputtering; Steel; Wire;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1981.1061718
Filename
1061718
Link To Document