• DocumentCode
    987077
  • Title

    Anodic oxide gate a-Si:H MOSFET

  • Author

    Yamamoto, H. ; Sawada, T. ; Arimoto, S. ; Hasegawa, H. ; Ohno, H.

  • Author_Institution
    Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
  • Volume
    19
  • Issue
    16
  • fYear
    1983
  • Firstpage
    607
  • Lastpage
    608
  • Abstract
    The first a-Si:H MOSFET having native oxide at the insulator/a-Si:H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3/native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/V s after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si:H device technology as a low-temperature oxidation process.
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; insulated gate field effect transistors; semiconductor technology; silicon; AGW electrolyte; Al2O3/native oxide/a-Si:H gate structures; MOSFET; Si:H; amorphous semiconductors; anodic oxidation; effective mobilities; low-temperature annealing; low-temperature oxidation process; native oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830413
  • Filename
    4247909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987077