Title :
GaInAs/InP large bandwidth (> 2 GHz) PIN detectors
Author :
Pearsall, T.P. ; Logan, R.A. ; Bethea, C.G.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Ga0.47In0.53As/InP heterophotodiodes are demonstrated with a bandwidth greater than 2 GHz, less than 0.5 pF capacitance, and subnanoampere dark current at the operating bias. These photodiodes satisfy criteria for both low noise and high speed in the 1 MHz¿2 GHz bit-rate range for optical fibre telecommunications
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; Ga0.47In0.53As/InP heterophotodiodes; III-V semiconductors; bandwidth; capacitance; optical fibre telecommunications; p-i-n diode detectors; photodetectors; subnanoampere dark current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830416
