• DocumentCode
    987225
  • Title

    a-Si:H MIS position sensitive detector by anodic oxidation processes

  • Author

    Arimoto, S. ; Yamamoto, Hiroshi ; Ohno, Hideo ; Hasegawa, Hiroshi

  • Author_Institution
    Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
  • Volume
    19
  • Issue
    16
  • fYear
    1983
  • Firstpage
    628
  • Lastpage
    629
  • Abstract
    The first fabrication of an amorphous silicon position-sensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; metal-insulator-semiconductor devices; photodetectors; semiconductor thin films; silicon; MIS position sensitive detector; amorphous Si:H films; anodic oxidation processes; lateral photocurrent response; one dimensional structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830428
  • Filename
    4247926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987225