DocumentCode
987265
Title
Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
Author
Kwon, Jang Yeon ; Son, Kyoung Seok ; Jung, Ji Sim ; Kim, Tae Sang ; Ryu, Myung Kwan ; Park, Kyung Bae ; Yoo, Byung Wook ; Kim, Jung Woo ; Lee, Young Gu ; Park, Kee Chan ; Lee, Sang Yoon ; Kim, Jong Min
Author_Institution
Display Device & Process. Lab., Samsung Adv. Inst. of Technol., Yongin
Volume
29
Issue
12
fYear
2008
Firstpage
1309
Lastpage
1311
Abstract
The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm2/V ldr s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.
Keywords
LED displays; carrier mobility; gallium compounds; indium compounds; thin film transistors; zinc compounds; GIZO active layer deposition; Ga2O3-In2O3-ZnO; active-matrix organic light-emitting diode display; bottom-gate GIZO thin-film transistors; bottom-gate gallium indium zinc oxide thin-film transistor array; fabrication process; field-effect mobility; high-resolution AMOLED display; silicon oxide passivation layer; threshold voltage; Active matrix organic light emitting diodes; Displays; Fabrication; Gallium compounds; Indium gallium zinc oxide; Passivation; Silicon; Thin film transistors; Threshold voltage; Zinc oxide; $hbox{Ga}_{2}hbox{O}_{3}{-}hbox{In}_{2}hbox{O}_{3}{-}hbox{ZnO}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.2006637
Filename
4671156
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