DocumentCode :
987288
Title :
Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained 
nMOSFET
Author :
Wu, Woei-Cherng ; Chao, Tien-Sheng ; Chiu, Te-Hsin ; Wang, Jer-Chyi ; Lai, Chao-Sung ; Ma, Ming-Wen ; Lo, Wen-Cheng
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu
Volume :
29
Issue :
12
fYear :
2008
Firstpage :
1340
Lastpage :
1343
Abstract :
The positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer (CESL)-strained HfO2 nMOSFET are thoroughly investigated. For the first time, the effects of CESL on an HfO2 dielectric are investigated for PBTI characteristics. A roughly 50% reduction of VTH shift can be achieved for the 300-nm CESL HfO2 nMOSFET after 1000-s PBTI stressing without obvious HfO2/Si interface degradation, as demonstrated by the negligible charge pumping current increase (< 4%). In addition, the HfO2 film of CESL devices has a deeper trapping level (0.83 eV), indicating that most of the shallow traps (0.75 eV) in as-deposited HfO2 film can be eliminated for CESL devices.
Keywords :
MOSFET; dielectric properties; electric charge; elemental semiconductors; hafnium compounds; silicon; CESL; HfO2; Si; contact-etch-stop-layer-induced local-tensile-strained; dielectric; interface degradation; nMOSFET; positive bias temperature instability; size 300 nm; CMOS technology; Chaos; Degradation; Etching; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFET circuits; Temperature; $ hbox{HfO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2005519
Filename :
4671158
Link To Document :
