Title :
Negative differential resistance in GaAs MESFETs
Author :
Fjeldly, T.A. ; Johannesson, J.S.
Author_Institution :
University of Trondheim, Norwegian Institute of Technology, Electronics Research Laboratory, Trondheim, Norway
Abstract :
The occurrence of stationary domains and negative differential resistance in GaAs MESFETs is shown to be favoured for a certain range of combinations of pinch-off voltage, gate voltage and saturation voltage. Outside this range the transistor either shows instability or normal JFET behaviour. The predictions are in good agreement with available experimental data.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; negative resistance; GaAs MESFETs; III-V semiconductors; gate voltage; negative differential resistance; pinch-off voltage; saturation voltage; stationary domains;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830441
