• DocumentCode
    987412
  • Title

    Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector

  • Author

    Tohmori, Y. ; Suematsu, Y. ; Tsushima, H. ; Arai, S.

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    19
  • Issue
    17
  • fYear
    1983
  • Firstpage
    656
  • Lastpage
    657
  • Abstract
    Fine tuning of lasing wavelength was achieved with a butt-jointed built-in DBR laser integrated with an additional tuning waveguide. The plasma effect of the injected carrier was utilised. The wavelength shift of 4.0 Ã… was demonstrated by an injected tuning current of 4.1 mA.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP/InP; III-V semiconductors; butt-jointed built-in DBR laser; distributed Bragg reflector; injected carrier; injected tuning current; integrated semiconductor laser; lasing wavelength; plasma effect; tuning; tuning waveguide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830446
  • Filename
    4247945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987412