• DocumentCode
    987458
  • Title

    Incident wavelength dependence of pulse responses in InP/InGaAsP/InGaAs avalanche photodiodes

  • Author

    Yasuda, Kazuhiro ; Shirai, Tokimasa ; Mikawa, T. ; Kishi, Y. ; Kaneda, Tadahiro

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    19
  • Issue
    17
  • fYear
    1983
  • Firstpage
    662
  • Lastpage
    663
  • Abstract
    Pulse responses of InP/InGaAsP/InGaAs APDs have been studied at 1.3 and 1.55 ¿m. A faster response rise-up characteristic was observed at 1.55 ¿m than at 1.3 ¿m. This result indicates that response speed depends on the hole generating region and hole pile-up at the heterojunction is decreased by introducing a hole-acceleration layer such as InGaAsP.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; p-n heterojunctions; 1.3 micron wavelength; 1.55 micron wavelength; III-V semiconductors; InP/InGaAsP/InGaAs APDs; avalanche photodiodes; hole generating region; hole pile-up; hole-acceleration layer; pulse responses; rise-up characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830451
  • Filename
    4247950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987458