Title :
Incident wavelength dependence of pulse responses in InP/InGaAsP/InGaAs avalanche photodiodes
Author :
Yasuda, Kazuhiro ; Shirai, Tokimasa ; Mikawa, T. ; Kishi, Y. ; Kaneda, Tadahiro
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Pulse responses of InP/InGaAsP/InGaAs APDs have been studied at 1.3 and 1.55 ¿m. A faster response rise-up characteristic was observed at 1.55 ¿m than at 1.3 ¿m. This result indicates that response speed depends on the hole generating region and hole pile-up at the heterojunction is decreased by introducing a hole-acceleration layer such as InGaAsP.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; p-n heterojunctions; 1.3 micron wavelength; 1.55 micron wavelength; III-V semiconductors; InP/InGaAsP/InGaAs APDs; avalanche photodiodes; hole generating region; hole pile-up; hole-acceleration layer; pulse responses; rise-up characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830451
