DocumentCode
987534
Title
Logic design based on negative differential resistance characteristics of quantum electronic devices
Author
Mohan, S. ; Mazumder, P. ; Haddad, G.I. ; Mains, R.K. ; Sun, J.P.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
140
Issue
6
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
383
Lastpage
391
Abstract
New quantum electronic devices such as resonant tunnelling diodes and transistors have negative differential resistance characteristics that can be exploited to design novel high-speed circuits. The high intrinsic switching speed of these devices, combined with the novel circuit structures used to implement standard logic functions, leads to ultrafast computing circuits. The new circuit structures presented here provide extremely compact implementations of functions such as carry generation and addition. The most significant impact of these circuits on the field of logic design is the introduction of a totally new set of relative costs of various basic gates; re-evaluation of the logic in the light of these new cost functions leads to ultrafast and compact designs
Keywords
logic design; logic gates; negative resistance; resonant tunnelling devices; tunnel diodes; basic logic gates; carry generation; cost functions; high-speed circuits; intrinsic switching speed; logic design; logic functions; negative differential resistance characteristics; quantum electronic devices; resonant tunnelling diodes; ultrafast computing circuits;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
250005
Link To Document