• DocumentCode
    987534
  • Title

    Logic design based on negative differential resistance characteristics of quantum electronic devices

  • Author

    Mohan, S. ; Mazumder, P. ; Haddad, G.I. ; Mains, R.K. ; Sun, J.P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    140
  • Issue
    6
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    383
  • Lastpage
    391
  • Abstract
    New quantum electronic devices such as resonant tunnelling diodes and transistors have negative differential resistance characteristics that can be exploited to design novel high-speed circuits. The high intrinsic switching speed of these devices, combined with the novel circuit structures used to implement standard logic functions, leads to ultrafast computing circuits. The new circuit structures presented here provide extremely compact implementations of functions such as carry generation and addition. The most significant impact of these circuits on the field of logic design is the introduction of a totally new set of relative costs of various basic gates; re-evaluation of the logic in the light of these new cost functions leads to ultrafast and compact designs
  • Keywords
    logic design; logic gates; negative resistance; resonant tunnelling devices; tunnel diodes; basic logic gates; carry generation; cost functions; high-speed circuits; intrinsic switching speed; logic design; logic functions; negative differential resistance characteristics; quantum electronic devices; resonant tunnelling diodes; ultrafast computing circuits;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    250005