Title :
Equivalent circuit for a GaAs CCD
Author :
Pennathur, S. ; Kwok, H.H.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fDate :
12/1/1993 12:00:00 AM
Abstract :
An equivalent circuit model was proposed for the charge transfer mechanisms in a GaAs charge coupled device (CCD). Realistic simulations were carried out to assess the model at different transfer times and for different sizes of the charge packet. A comparison was also made with an analytical model and the results were quite close. Simulations of the input and the output stages of the device were also examined. The key advantages of the equivalent circuit model appeared to be substantial reduction in the computing time in addition to its primary use in a circuit simulator
Keywords :
III-V semiconductors; charge-coupled devices; digital simulation; equivalent circuits; gallium arsenide; semiconductor device models; CCD; GaAs; GaAs charge coupled device; charge packet; charge transfer mechanisms; circuit simulator; computing time; equivalent circuit model; input stages; output stages; transfer times;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
