Title :
Simulation of GaAs submicron FET with hot-electron injection structure
Author :
Tomizawa, Keiichi ; Awano, Yuji ; Hashizume, Nobuya ; Kawashima, Mitsumasa
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
Two-dimensional Monte Carlo simulation of a 0.25 ¿m-long GaAs FET with an (Al, Ga)As/GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 ¿m) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fr is found to reach about 250 GHz.
Keywords :
III-V semiconductors; Monte Carlo methods; field effect transistors; gallium arsenide; hot carriers; semiconductor device models; (Al, Ga)As/GaAs heterojunction source; GaAs FET; Monte Carlo simulation; hot-electron injection structure; mean electron velocity; semiconductor device models; unity-current-gain frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830475
