Title :
1.3 ¿m InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy
Author :
Yanase, T. ; Kato, Yu ; Mito, I. ; Yamaguchi, Masaki ; Nishi, Kentaro ; Kobayashi, Kaoru ; Lang, Richard
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Low-threshold InGaAsP/InP multiquantum-well lasers emitting at 1.3 ¿m have been successfully fabricated. The multilayer structure has been grown by hydride transport vapour-phase epitaxy with a double-growth chamber reactor. Broad-area structure threshold current density as low as 1.2 kA/cm2 has been obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 microns wavelength; III-V semiconductors; InGaAsP/InP multiquantum-well lasers; current density; double-growth chamber reactor; hydride transport vapour-phase epitaxy; multilayer structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830477
