High-speed modulation characteristics of helium-implanted zinc-diffused vertical cavity surface emitting lasers

Author

Dziura, T.G. ; Yang, Y.J. ; Fernandez, R. ; Bardin, T. ; Wang, S.C.

Author_Institution

Lockheed Palo Alto Res. Lab., CA, USA

Volume

5

Issue

11

fYear

1993

Firstpage

1270

Lastpage

1272

Abstract

The high-speed modulation characteristics of helium-implanted zinc-diffused vertical cavity surface emitting semiconductor lasers are measured. Devices with a nominal active region diameter of 10 and 20 mu m exhibit a move-out rate of 4.5-6.5 GHz/mW/sup 1/2/ and a K factor of 0.65-0.85 ns. Maximum modulation frequency is limited by ohmic heating to approximately 5.5 GHz for 10- mu m diameter lasers and to 2.7 GHz for 20- mu m diameter lasers. A rolloff in the response below the relaxation oscillation frequency is observed and is explained well by a diffusion capacitance model.<>

Keywords

diffusion in solids; helium; high-speed optical techniques; ion implantation; optical modulation; semiconductor lasers; zinc; 10 micron; 2.7 GHz; 20 micron; 5.5 GHz; AlAs-AlGaAs:He,Zn-GaAs; K factor; VCSEL; diffusion capacitance model; helium-implanted zinc-diffused vertical cavity surface emitting lasers; high-speed modulation characteristics; maximum modulation frequency; move-out rate; nominal active region diameter; ohmic heating; relaxation oscillation frequency; Laser modes; Laser radar; Optical modulation; Optical surface waves; Power generation; Pump lasers; Solid lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.250041

Filename

250041