Title :
New method for determining the series resistances in a MESFET or TEGFET
Author :
Urien, P. ; Delagebeaudeuf, D.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Abstract :
The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.
Keywords :
Schottky gate field effect transistors; electric resistance; semiconductor device models; MESFET; Schottky gate; TEGFET; high current; model; parasitic resistances; series resistances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830478
