DocumentCode
987759
Title
Equivalent-circuit consideration of dual-gate MESFETs at high frequency
Author
Kim, Bumki
Author_Institution
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Volume
19
Issue
17
fYear
1983
Firstpage
705
Lastpage
706
Abstract
The simplified high-frequency equivalent circuit of a dual-gate FET is described. It is shown that the input impedance is similar to that of a single-gate FET but the output resistance and capacitance (parallel equivalent circuit) are higher. The output resistance and the transconductance decrease as frequency increases. The unilateral gain of a dual-gate FET rolls off 12 dB/octave.
Keywords
Schottky gate field effect transistors; equivalent circuits; capacitance; dual-gate MESFETs; high-frequency equivalent circuit; input impedance; output resistance; transconductance; unilateral gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830480
Filename
4247979
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