DocumentCode
987764
Title
Determination of wavelength dependence of the reflectivity at AR coated diode facets
Author
Luo, B. ; Wu, L. ; Chen, J. ; Lu, Y.
Author_Institution
Dept. of Electr. Eng., Southwest Jiaotong Univ., Sichuan, China
Volume
5
Issue
11
fYear
1993
Firstpage
1279
Lastpage
1281
Abstract
Wavelength dependence of the reflectivity at an antireflection (AR) coated diode facet has been determined by comparing the spontaneous emission spectra obtained under the same bias condition before and after this facet is AR coated. Reliable measurements can be achieved by proper choice of the bias current.<>
Keywords
antireflection coatings; reflectivity; semiconductor lasers; AR coated diode facets; InGaAsP; InGaAsP laser diodes; antireflection coated diode facet; bias condition; bias current; reflectivity; spontaneous emission spectra; wavelength dependence; Coatings; Current measurement; Modulation; Optical fiber devices; Reflectivity; Semiconductor diodes; Semiconductor lasers; Semiconductor optical amplifiers; Spontaneous emission; Wavelength measurement;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.250044
Filename
250044
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