DocumentCode :
987824
Title :
1.5 GHz operation of an AlxGa1¿xAs/GaAs modulation-doped photoconductive detector
Author :
Pang, Y.M. ; Chen, C.Y. ; Garbinski, P.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Volume :
19
Issue :
18
fYear :
1983
Firstpage :
716
Lastpage :
717
Abstract :
We demonstrate a planar AlxGa1¿xAs/GaAs modulation-doped photoconductive detector operating at frequencies up to 1.5 GHz. This detector exhibits a peak responsivity of 2 A/W at these operating conditions, which corresponds to a gain of 3. We found that the peak responsivity increased with reduced pulse repetition rates, reaching 5 A/W at 1 MHz. We also measured the noise power at 800 MHz. This investigation suggests that the detector can be useful for shortwavelength (¿ ¿ 0.82 ¿m) giga-bit-rate integrated photoreceiver applications.
Keywords :
III-V semiconductors; aluminium compounds; field effect devices; gallium arsenide; optical communication equipment; photoconducting devices; photodetectors; receivers; 0.82 micron; 1.5 GHz operation; AlxGa1-xAs/GaAs modulation-doped photoconductive detector; III-V semiconductors; field effect devices; giga-bit-rate integrated photoreceiver; noise power; optical communication equipment; peak responsivity; pulse repetition rates;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830487
Filename :
4247988
Link To Document :
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