• DocumentCode
    987824
  • Title

    1.5 GHz operation of an AlxGa1¿xAs/GaAs modulation-doped photoconductive detector

  • Author

    Pang, Y.M. ; Chen, C.Y. ; Garbinski, P.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    19
  • Issue
    18
  • fYear
    1983
  • Firstpage
    716
  • Lastpage
    717
  • Abstract
    We demonstrate a planar AlxGa1¿xAs/GaAs modulation-doped photoconductive detector operating at frequencies up to 1.5 GHz. This detector exhibits a peak responsivity of 2 A/W at these operating conditions, which corresponds to a gain of 3. We found that the peak responsivity increased with reduced pulse repetition rates, reaching 5 A/W at 1 MHz. We also measured the noise power at 800 MHz. This investigation suggests that the detector can be useful for shortwavelength (¿ ¿ 0.82 ¿m) giga-bit-rate integrated photoreceiver applications.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect devices; gallium arsenide; optical communication equipment; photoconducting devices; photodetectors; receivers; 0.82 micron; 1.5 GHz operation; AlxGa1-xAs/GaAs modulation-doped photoconductive detector; III-V semiconductors; field effect devices; giga-bit-rate integrated photoreceiver; noise power; optical communication equipment; peak responsivity; pulse repetition rates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830487
  • Filename
    4247988